TY  - RPRT
TI  - Towards sub-30nm Contacted Gate Pitch, Forked Contact and Dynamically-Doped Nanosheets to Enhance Si and 2D Materials Device Scaling
AU  - Aryan Afzalian
AU  - Zubair Ahmed
AU  - Julien Ryckaert
PY  - 2022
UR  - https://arxiv.org/abs/2203.06364
ID  - 2203.06364
ER  -