@misc{indiciaeae0857028de3,
  title = {Improved Gradual Resistive Switching Range and 1000x On/Off Ratio in HfOx RRAM Achieved with a \$Ge\_2Sb\_2Te\_5\$ Thermal Barrier},
  author = {Raisul Islam and Shengjun Qin and Sanchit Deshmukh and Zhouchangwan Yu and Cagil Koroglu and Asir Intisar Khan and Kirstin Schauble and Krishna C. Saraswat and Eric Pop and H. -S. Philip Wong},
  year = {2022},
  doi = {10.1063/5.0101417},
  url = {https://arxiv.org/abs/2203.12190},
  note = {Source identifier: 2203.12190}
}