@misc{indiciae90fb34cafcca,
  title = {First-principles study of oxygen vacancy defects in orthorhombic Hf\$\_\{0.5\}\$Zr\$\_\{0.5\}\$O\$\_2\$/SiO\$\_2\$/Si gate stack},
  author = {Junshuai Chai and Hao Xu and Jinjuan Xiang and Yuanyuan Zhang and Shujing Zhao and Fengbin Tian and Jiahui Duan and Kai Han and Xiaolei Wang and Jun Luo and Wenwu Wang and Tianchun Ye},
  year = {2022},
  doi = {10.1063/5.0106750},
  url = {https://arxiv.org/abs/2204.13864},
  note = {Source identifier: 2204.13864}
}