@misc{indiciaeeb08000fc496,
  title = {A Gate-All-Around Single-Channel In2O3 Nanoribbon FET with Near 20 mA/μm Drain Current},
  author = {Zhuocheng Zhang and Zehao Lin and Pai-Ying Liao and Vahid Askarpour and Hongyi Dou and Zhongxia Shang and Adam Charnas and Mengwei Si and Sami Alajlouni and Jinhyun Noh and Ali Shakouri and Haiyan Wang and Mark Lundstrom and Jesse Maassen and Peide D. Ye},
  year = {2022},
  doi = {10.1109/led.2022.3210005},
  url = {https://arxiv.org/abs/2205.00360},
  note = {Source identifier: 2205.00360}
}