@misc{indiciaeddfbaab2c9d4,
  title = {C-AND: Mixed Writing Scheme for Disturb Reduction in 1T Ferroelectric FET Memory},
  author = {Mor M. Dahan and Evelyn T. Breyer and Stefan Slesazeck and Thomas Mikolajick and Shahar Kvatinsky},
  year = {2022},
  doi = {10.1109/tcsi.2021.3139736},
  url = {https://arxiv.org/abs/2205.12061},
  note = {Source identifier: 2205.12061}
}