TY  - RPRT
TI  - C-AND: Mixed Writing Scheme for Disturb Reduction in 1T Ferroelectric FET Memory
AU  - Mor M. Dahan
AU  - Evelyn T. Breyer
AU  - Stefan Slesazeck
AU  - Thomas Mikolajick
AU  - Shahar Kvatinsky
PY  - 2022
DO  - 10.1109/tcsi.2021.3139736
UR  - https://arxiv.org/abs/2205.12061
ID  - 2205.12061
ER  -