@misc{indiciae4066034248a0,
  title = {A Lateral AlGaN/GaN Schottky Barrier Diode with 0.36 V Turn-on Voltage and 10 kV Breakdown Voltage by Using Double Barrier Anode Structure},
  author = {Ru Xu and Peng Chen and Jing Zhou and Yimeng Li and Yuyin Li and Tinggang Zhu and Dunjun Chen and Zili Xie and Jiandong Ye and Xiangqian Xiu and Rong Zhang and Youdou Zheng},
  year = {2022},
  url = {https://arxiv.org/abs/2206.07881},
  note = {Source identifier: 2206.07881}
}