@misc{indiciae4492955072c5,
  title = {Study and characterization of GaN MOS capacitors: planar versus trench topographies},
  author = {K. Mukherjee and C. De Santi and S. You and K. Geens and M. Borga and S. Decoutere and B. Bakeroot and P. Diehle and F. Altmann and G. Meneghesso and E. Zanoni and M. Meneghini},
  year = {2022},
  doi = {10.1063/5.0087245},
  url = {https://arxiv.org/abs/2207.09948},
  note = {Source identifier: 2207.09948}
}