@misc{indiciae45f97c555b96,
  title = {Impact of Doping and Geometry on Breakdown Voltage of Semi-Vertical GaN-on-Si MOS Capacitors},
  author = {D. Favero and C. De Santi and K. Mukherjee and M. Borga and K. Geens and U. Chatterjee and B. Bakeroot and S. Decoutere and F. Rampazzo and G. Meneghesso and E. Zanoni and M. Meneghini},
  year = {2022},
  doi = {10.1016/j.microrel.2022.114620},
  url = {https://arxiv.org/abs/2210.10558},
  note = {Source identifier: 2210.10558}
}