@misc{indiciae4ad29ae1a9e7,
  title = {Threshold voltage instability by charge trapping effects in the gate region of p-GaN HEMTs},
  author = {Giuseppe Greco and Patrick Fiorenza and Filippo Giannazzo and Corrado Bongiorno and Maurizio Moschetti and Cettina Bottari and Mario Santi Alessandrino and Ferdinando Iucolano and Fabrizio Roccaforte},
  year = {2023},
  doi = {10.1063/5.0122097},
  url = {https://arxiv.org/abs/2212.06442},
  note = {Source identifier: 2212.06442}
}