TY  - RPRT
TI  - Improvement of Memory Characteristics of Charge-Trapping Memory Device by Using HfO$_2$/Al$_2$O$_3$ Laminate
AU  - Yifan Hu
PY  - 2023
UR  - https://arxiv.org/abs/2303.10459
ID  - 2303.10459
ER  -