@misc{indiciaece155a039256,
  title = {Crack-free high composition (>35\%) thick (>30 nm) barrier AlGaN/AlN/GaN HEMT on sapphire with record low sheet resistance},
  author = {Swarnav Mukhopadhyay and Cheng Liu and Jiahao Chen and Surjava Sanyal and Ruixin Bai and Guangying Wang and Chirag Gupta and Shubhra Pasayat},
  year = {2024},
  doi = {10.3390/cryst13101456},
  url = {https://arxiv.org/abs/2304.05593},
  note = {Source identifier: 2304.05593}
}