@misc{indiciaee7be4e709eb1,
  title = {Sub-100 nm β-Ga2O3 MOSFET with 55 GHz fMAX and >100 V breakdown},
  author = {Chinmoy Nath Saha and Abhishek Vaidya and A F M Anhar Uddin Bhuiyan and Lingyu Meng and Hongping Zhao and Uttam Singisetti},
  year = {2023},
  url = {https://arxiv.org/abs/2305.04725},
  note = {Source identifier: 2305.04725}
}