@misc{indiciae1a74ae3e72bb,
  title = {Substantial reduction of write-error rate for voltage-controlled magnetoresistive random access memory by in-plane demagnetizing field and voltage-induced negative out-of-plane anisotropy field},
  author = {Rie Matsumoto and Shiniji Yuasa and Hiroshi Imamura},
  year = {2023},
  doi = {10.1016/j.jmmm.2023.170804},
  url = {https://arxiv.org/abs/2305.09883},
  note = {Source identifier: 2305.09883}
}