TY  - RPRT
TI  - Substantial reduction of write-error rate for voltage-controlled magnetoresistive random access memory by in-plane demagnetizing field and voltage-induced negative out-of-plane anisotropy field
AU  - Rie Matsumoto
AU  - Shiniji Yuasa
AU  - Hiroshi Imamura
PY  - 2023
DO  - 10.1016/j.jmmm.2023.170804
UR  - https://arxiv.org/abs/2305.09883
ID  - 2305.09883
ER  -