@misc{indiciaeb3a07bc8bc61,
  title = {Charge-Trapping-Induced Compensation of the Ferroelectric Polarization in FTJs: Optimal Conditions for a Synaptic Device Operation},
  author = {R. Fontanini and M. Segatto and K. S. Nair and M. Holzer and F. Driussi and I. Häusler and C. T. Koch and C. Dubourdieu and V. Deshpande and D. Esseni},
  year = {2023},
  doi = {10.1109/ted.2022.3175684},
  url = {https://arxiv.org/abs/2309.01486},
  note = {Source identifier: 2309.01486}
}