@misc{indiciaea6ed46d46578,
  title = {Enlargement of Memory Window of Si Channel FeFET by Inserting Al2O3 Interlayer on Ferroelectric Hf0.5Zr0.5O2},
  author = {Tao Hu and Xiaoqing Sun and Mingkai Bai and Xinpei Jia and Saifei Dai and Tingting Li and Runhao Han and Yajing Ding and Hongyang Fan and Yuanyuan Zhao and Junshuai Chai and Hao Xu and Mengwei Si and Xiaolei Wang and Wenwu Wang},
  year = {2023},
  url = {https://arxiv.org/abs/2312.16829},
  note = {Source identifier: 2312.16829}
}