TY  - RPRT
TI  - Effect of the growth temperature and the AlN mole fraction on In incorporation and properties of quaternary III-nitride layers grown by molecular beam epitaxy
AU  - S. Fernández-Garrido
AU  - A. Redondo-Cubero
AU  - R. Gago
AU  - F. Bertram
AU  - J. Christen
AU  - E. Luna
AU  - A. Trampert
AU  - J. Pereiro
AU  - E. Muñoz
AU  - E. Calleja
PY  - 2024
DO  - 10.1063/1.2999564
UR  - https://arxiv.org/abs/2402.00581
ID  - 2402.00581
ER  -