@misc{indiciaef49d473b57c9, title = {On the experimental properties of the TS defect in 4H-SiC}, author = {Johannes A. F. Lehmeyer and Alexander D. Fuchs and Zhengming Li and Titus Bornträger and Fabio Candolfi and Maximilian Schober and Marcus Fischer and Martin Hartmann and Elke Neu and Michel Bockstedte and Michael Krieger and Heiko B. Weber}, year = {2024}, doi = {10.1088/1361-6463/ad7bc5}, url = {https://arxiv.org/abs/2404.09618}, note = {Source identifier: 2404.09618} }