@misc{indiciae35ca0c2af95f,
  title = {Impact of Top SiO2 interlayer Thickness on Memory Window of Si Channel FeFET with TiN/SiO2/Hf0.5Zr0.5O2/SiOx/Si (MIFIS) Gate Structure},
  author = {Tao Hu and Xianzhou Shao and Mingkai Bai and Xinpei Jia and Saifei Dai and Xiaoqing Sun and Runhao Han and Jia Yang and Xiaoyu Ke and Fengbin Tian and Shuai Yang and Junshuai Chai and Hao Xu and Xiaolei Wang and Wenwu Wang and Tianchun Ye},
  year = {2024},
  url = {https://arxiv.org/abs/2404.15825},
  note = {Source identifier: 2404.15825}
}