TY  - RPRT
TI  - Atomic layer etching of SiO$_2$ using sequential exposures of Al(CH$_3$)$_3$ and H$_2$/SF$_6$ plasma
AU  - David Catherall
AU  - Azmain Hossain
AU  - Austin Minnich
PY  - 2024
DO  - 10.1116/6.0003793
UR  - https://arxiv.org/abs/2405.05491
ID  - 2405.05491
ER  -