TY  - RPRT
TI  - Cryogenic Behavior of High-Permittivity Gate Dielectrics: The Impact of the Atomic Layer Deposition Temperature and the Lithographic Patterning Method
AU  - Alessandro Paghi
AU  - Sebastiano Battisti
AU  - Simone Tortorella
AU  - Giorgio De Simoni
AU  - Francesco Giazotto
PY  - 2025
DO  - 10.1063/5.0250428
UR  - https://arxiv.org/abs/2407.04501
ID  - 2407.04501
ER  -