@misc{indiciae8d2fd47dfaa7,
  title = {Tailoring 4H-SiC Surface Electronic States by Atomic-Layer Deposition for Ideal Peta-Ohm Resistors},
  author = {Yuying Xi and Helios Y. Li and Guohui Li and Qingmei Su and Kaili Mao and Bingshe Xu and Yuying Hao and Nicholas X. Fang and Yanxia Cui},
  year = {2025},
  url = {https://arxiv.org/abs/2407.10208},
  note = {Source identifier: 2407.10208}
}