@misc{indiciae9819ef5b33eb,
  title = {TCAD modeling of radiation-induced defects in 4H-SiC diodes},
  author = {Philipp Gaggl and Jürgen Burin and Andreas Gsponer and Simon Emanuel Waid and Richard Thalmeier and Thomas Bergauer},
  year = {2024},
  url = {https://arxiv.org/abs/2407.11776},
  note = {Source identifier: 2407.11776}
}