TY  - RPRT
TI  - TCAD modeling of radiation-induced defects in 4H-SiC diodes
AU  - Philipp Gaggl
AU  - Jürgen Burin
AU  - Andreas Gsponer
AU  - Simon Emanuel Waid
AU  - Richard Thalmeier
AU  - Thomas Bergauer
PY  - 2024
UR  - https://arxiv.org/abs/2407.11776
ID  - 2407.11776
ER  -