@misc{indiciae1af475f661c9,
  title = {Room temperature Mott transistor based on resistive switching in disordered V2O3 films grown on Si},
  author = {Binoy Krishna De and V. G. Sathe and Divya and Pragati Sharma and Shubham Kumar Parate and Hemant Singh Kunwar and Pavan Nukala and S. B. Roy},
  year = {2024},
  url = {https://arxiv.org/abs/2407.12507},
  note = {Source identifier: 2407.12507}
}