@misc{indiciaea611308855c8,
  title = {First Demonstration of HZO/beta-Ga2O3 Ferroelectric FinFET with Improved Memory Window},
  author = {Seohyeon Park and Jaewook Yoo and Hyeojun Song and Hongseung Lee and Seongbin Lim and Soyeon Kim and Minah Park and Bongjoong Kim and Keun Heo and Peide D. Ye and Hagyoul Bae},
  year = {2024},
  url = {https://arxiv.org/abs/2407.18187},
  note = {Source identifier: 2407.18187}
}