@misc{indiciaea3d9b7dfa1ea,
  title = {Formation of a lateral p-n junction light-emitting diode on an n-type high-mobility GaAs/Al\$\_\{0.33\}\$Ga\$\_\{0.67\}\$As heterostructure},
  author = {C. P. Dobney and A. Nasir and P. See and C. J. B. Ford and J. P. Griffiths and C. Chen and D. A. Ritchie and M. Kataoka},
  year = {2024},
  url = {https://arxiv.org/abs/2408.08423},
  note = {Source identifier: 2408.08423}
}