TY  - RPRT
TI  - A new critical growth parameter and mechanistic model for SiC nanowire synthesis via Si substrate carbonization: the role of H$_2$/CH$_4$ gas flow ratio
AU  - Junghyun Koo
AU  - Chinkyo Kim
PY  - 2024
UR  - https://arxiv.org/abs/2409.09233
ID  - 2409.09233
ER  -