TY  - RPRT
TI  - NiOx/\b{eta}-Ga2O3 Heterojunction Diode Achieving Breakdown Voltage >3 kV with Plasma Etch Field-Termination
AU  - Yizheng Liu
AU  - Saurav Roy
AU  - Carl Peterson
AU  - Arkka Bhattacharyya
AU  - Sriram Krishnamoorthy
PY  - 2024
UR  - https://arxiv.org/abs/2409.17374
ID  - 2409.17374
ER  -