@misc{indiciae913fd4921745,
  title = {Time Dependent Dielectric Breakdown in 4H-SiC power MOSFETs under positive and negative gate-bias and gate-current stresses at 200°C},
  author = {P. Fiorenza and F. Cordiano and S. M. Alessandrino and A. Russo and E. Zanetti and M. Saggio and C. Bongiorno and F. Giannazzo and F. Roccaforte},
  year = {2024},
  url = {https://arxiv.org/abs/2410.19545},
  note = {Source identifier: 2410.19545}
}