@misc{indiciae5dee5537399e,
  title = {Impact of the NO annealing duration on the SiO2/4H-SiC interface properties in lateral MOSFETs: the energetic profile of the near-interface-oxide traps},
  author = {Patrick Fiorenza and Marco Zignale and Marco Camalleri and Laura Scalia and Edoardo Zanetti and Mario Saggio and Filippo Giannazzo and Fabrizio Roccaforte},
  year = {2024},
  url = {https://arxiv.org/abs/2410.21235},
  note = {Source identifier: 2410.21235}
}