TY  - RPRT
TI  - Impact of the NO annealing duration on the SiO2/4H-SiC interface properties in lateral MOSFETs: the energetic profile of the near-interface-oxide traps
AU  - Patrick Fiorenza
AU  - Marco Zignale
AU  - Marco Camalleri
AU  - Laura Scalia
AU  - Edoardo Zanetti
AU  - Mario Saggio
AU  - Filippo Giannazzo
AU  - Fabrizio Roccaforte
PY  - 2024
UR  - https://arxiv.org/abs/2410.21235
ID  - 2410.21235
ER  -