@misc{indiciae333acd6d1a46,
  title = {Ultralow Voltage Operation of p- and n-FETs Enabled by Self-Formed Gate Dielectric and Metal Contacts on 2D Tellurium},
  author = {Chang Niu and Linjia Long and Yizhi Zhang and Zehao Lin and Pukun Tan and Jian-Yu Lin and Wenzhuo Wu and Haiyan Wang and Peide D. Ye},
  year = {2024},
  url = {https://arxiv.org/abs/2412.04306},
  note = {Source identifier: 2412.04306}
}