@misc{indiciaea759eb4be40a,
  title = {Interplay of carrier density and mobility in Al-Rich (Al,Ga)N-Channel HEMTs: Impact on high-power device performance potential},
  author = {Badal Mondal and Pietro Pampili and Jayjit Mukherjee and David Moran and Peter James Parbrook and Stefan Schulz},
  year = {2025},
  doi = {10.1063/5.0277051},
  url = {https://arxiv.org/abs/2502.13809},
  note = {Source identifier: 2502.13809}
}