TY  - RPRT
TI  - Electrically active defects in 3C, 4H and 6H silicon carbide polytypes: A review
AU  - Ivana Capan
PY  - 2025
DO  - 10.3390/cryst15030255
UR  - https://arxiv.org/abs/2502.14426
ID  - 2502.14426
ER  -