@misc{indiciaeddff25002d1f,
  title = {ZrN nucleation layer provides backside ohmic contact to MBE-grown GaN nanowires},
  author = {Stanislav Tiagulskyi and Roman Yatskiv and Marta Sobanska and Karol Olszewski and Zbigniew R. Zytkiewicz and Jan Grym},
  year = {2025},
  url = {https://arxiv.org/abs/2502.19129},
  note = {Source identifier: 2502.19129}
}