@misc{indiciaea3870d590bbc,
  title = {High Breakdown Electric Field (> 5 MV/cm) in UWBG AlGaN Transistors},
  author = {Seungheon Shin and Hridibrata Pal and Jon Pratt and John Niroula and Yinxuan Zhu and Chandan Joishi and Brianna A. Klein and Andrew Armstrong and Andrew A. Allerman and Tomás Palacios and Siddharth Rajan},
  year = {2025},
  doi = {10.1063/5.0276718},
  url = {https://arxiv.org/abs/2504.12685},
  note = {Source identifier: 2504.12685}
}