@misc{indiciae9b10e8678f89,
  title = {Stable partial dislocation complexes in GaN as charge carrier lifetime modifiers for terahertz device applications by molecular dynamics and first-principle simulations},
  author = {Andrey Sarikov and Ihor Kupchak},
  year = {2025},
  doi = {10.1039/d5tc01812a},
  url = {https://arxiv.org/abs/2505.03206},
  note = {Source identifier: 2505.03206}
}