TY  - RPRT
TI  - Stable partial dislocation complexes in GaN as charge carrier lifetime modifiers for terahertz device applications by molecular dynamics and first-principle simulations
AU  - Andrey Sarikov
AU  - Ihor Kupchak
PY  - 2025
DO  - 10.1039/d5tc01812a
UR  - https://arxiv.org/abs/2505.03206
ID  - 2505.03206
ER  -