@misc{indiciaed76c658fccc4,
  title = {Scalable thru-hole epitaxy of GaN through self-adjusting \$h\$-BN masks via solution-processed 2D stacks},
  author = {Jongwoo Ha and Minah Choi and Jieun Yang and Chinkyo Kim},
  year = {2025},
  url = {https://arxiv.org/abs/2505.11045},
  note = {Source identifier: 2505.11045}
}