@misc{indiciae4a269b7e728d,
  title = {On the origin of the E1 electron trap level in GaN and dilute AlxGa1-xN films},
  author = {Piotr Kruszewski and Jose Coutinho and Vladimir P. Markevich and Pawel Prystawko and Lijie Sun and Jerzy Plesiewicz and Chris A. Dawe and Matthew P. Halsall and Anthony R. Peaker},
  year = {2025},
  url = {https://arxiv.org/abs/2506.10566},
  note = {Source identifier: 2506.10566}
}