@misc{indiciae3e84ecad2ada,
  title = {Negative capacitance overcomes Schottky-gate limits in GaN high-electron-mobility transistors},
  author = {Asir Intisar Khan and Jeong-Kyu Kim and Urmita Sikder and Koushik Das and Thomas Rodriguez and Rohith Soman and Srabanti Chowdhury and Sayeef Salahuddin},
  year = {2025},
  doi = {10.1126/science.adx6955},
  url = {https://arxiv.org/abs/2506.16758},
  note = {Source identifier: 2506.16758}
}