@misc{indiciaeed955afb5f2b,
  title = {The influence of nitrogen doping and annealing on the silicon vacancy in 4H-SiC},
  author = {Samuel G. Carter and Infiter Tathfif and Charity Burgess and Brenda VanMil and Suryakanti Debata and Pratibha Dev},
  year = {2025},
  url = {https://arxiv.org/abs/2506.17478},
  note = {Source identifier: 2506.17478}
}