@misc{indiciae62aafb96ac23,
  title = {Atomistic study of dislocation formation during Ge epitaxy on Si},
  author = {Luis Martín-Encinar and Luis A. Marqués and Iván Santos and Lourdes Pelaz},
  year = {2025},
  doi = {10.1016/j.apsusc.2025.164547},
  url = {https://arxiv.org/abs/2507.05082},
  note = {Source identifier: 2507.05082}
}