@misc{indiciae331900fd7346,
  title = {3D Atomic-Scale Metrology of Strain Relaxation and Roughness in Gate-All-Around (GAA) Transistors via Electron Ptychography},
  author = {Shake Karapetyan and Steven E. Zeltmann and Glen Wilk and Ta-Kun Chen and Vincent D. -H. Hou and David A. Muller},
  year = {2025},
  doi = {10.1038/s41467-026-69733-1},
  url = {https://arxiv.org/abs/2507.07265},
  note = {Source identifier: 2507.07265}
}