@misc{indiciae926d937f1997,
  title = {Dielectric Deposition Enhanced Crystallization in Atomic-Layer-Deposited Indium Oxide Transistors Achieving High Gated-Hall Mobility Exceeding 100 cm2/Vs at Room Temperature},
  author = {Chen Wang and Kai Jiang and Jinxiu Zhao and Ziheng Wang and Guilei Wang and Chao Zhao and Mengwei Si},
  year = {2025},
  url = {https://arxiv.org/abs/2510.15358},
  note = {Source identifier: 2510.15358}
}