@misc{indiciae9975413a4dde,
  title = {Elimination of the acoustoelectric domain and increasing of the emission intensity by means of shunting the lateral current in the InGaAs/GaAs heterostructures},
  author = {P. A. Belevskii and M. N. Vinoslavskii and O. S. Pylypchuk},
  year = {2025},
  url = {https://arxiv.org/abs/2511.03621},
  note = {Source identifier: 2511.03621}
}