@misc{indiciae1ad21e40564c,
  title = {Accurate Modeling of Gate Leakage Currents in SiC Power MOSFETs},
  author = {Ang Feng and Alexander Karl and Dominic Waldhör and Marina Avramenko and Peter Moens and Tibor Grasser},
  year = {2025},
  url = {https://arxiv.org/abs/2512.02604},
  note = {Source identifier: 2512.02604}
}