TY  - RPRT
TI  - Accurate Modeling of Gate Leakage Currents in SiC Power MOSFETs
AU  - Ang Feng
AU  - Alexander Karl
AU  - Dominic Waldhör
AU  - Marina Avramenko
AU  - Peter Moens
AU  - Tibor Grasser
PY  - 2025
UR  - https://arxiv.org/abs/2512.02604
ID  - 2512.02604
ER  -